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IPL60R199CP

Brand: Infineon

IPL60R199CP is the Infineon CoolMOS CP 600 V N-channel superjunction power MOSFET in ThinPAK 8 × 8 surface-mount package. With 199 mΩ maximum on-resistance, 16.4 A continuous drain current, 22 nC typical gate charge and 139 W power dissipation, it targets consumer adapter, charger and auxiliary power supply applications where low-EMI fast switching reduces snubber cost.

Stock & Date Code

Brand Part Number Qty D/C Note
Infineon IPL60R199CP 3,000 26+ Infineon Technologies IPL60R199CP Infineon CoolMOS CP N-channel power MOSFET, 600 V, 199 mOhm RDS(on) max, 16.4 A ID, ThinPAK 8×8 package, fast-switching superjunction with low EMI for consumer PSU.; confirm date code, lot and packing condition by RFQ.

Listed stock and date code are subject to final RFQ confirmation.

Power IC Specifications

ParameterValue / Specification
Device TypeN-channel enhancement-mode superjunction power MOSFET, CoolMOS CP technology
Voltage RatingVDS 600 V, VGS ±20 V
Current RatingID 16.4 A at TC=25°C, ID_pulse 38 A
On-Resistance RDS(on)199 mΩ mt VGS=10 V, ID=6.6 A, TJ=25°C
Total Gate Charge Qg22 nC typical at VGS=10 V, VDS=400 V
Power Dissipation139 W at TC=25°C
Input Capacitance Ciss950 pF typical at VDS=100 V, f=1 MHz
Switching PerformanceRg 1.3 Ω typical internal gate resistance; optimized for low EMI switching
Operating Temperature-55°C to +150°C (TJ)
Package / CaseThinPAK 8×8

Power Features & Applications

  • IPL60R199CP is the Infineon CoolMOS CP 600 V N-channel superjunction power MOSFET with 199 mΩ maximum on-resistance in ThinPAK 8 × 8 surface-mount package
  • 600 V drain-source rating with ±20 V gate-source voltage targets consumer and light-industrial offline power supply primary-side switching applications
  • 16.4 A continuous drain current at TC=25°C and 38 A pulse current provide sufficient capability for adapter and auxiliary power converter designs
  • 199 mΩ max RDS(on) at VGS=10 V with 22 nC typical gate charge optimizes for easy-to-drive operation without compromising conduction efficiency
  • 139 W power dissipation at TC=25°C and -55°C to +150°C junction range support consumer-grade thermal design envelopes
  • 950 pF typical input capacitance with integrated low gate resistance delivers fast yet EMI-optimized switching behavior in hard-switching topologies
  • CoolMOS CP technology balances fast switching with low EMI signatures — suitable for cost-sensitive consumer PSU designs requiring compliance without snubber complexity

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Frequently Asked Questions

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