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RFQ ListingDiscrete Semiconductors
Brand: Nexperia

PSMN2R3-100SSE

N-Channel MOSFET for Hotswap and Soft Start

PSMN2R3-100SSE is a Nexperia application-specific N-channel MOSFET for hotswap and soft start, delivering 100 V blocking with 2.3 mOhm (2.28 mOhm max) RDSon, 255 A drain current and 341 W dissipation in the copper-clip LFPAK88 (SOT1235) package qualified to 175 °C. It complements hot-swap controllers on 48 V backplane systems.

ManufacturerNexperia
PackageLFPAK88 (SOT1235), 4 leads, 2 mm pitch, 8.00 × 8.00 × 1.60 mm
SeriesPSMN

Power IC Specifications

ParameterValue / Specification
Device TypeN-channel enhancement mode ASFET optimized for hotswap and soft start
Voltage Rating100 V drain-source voltage (VDS); ±20 V gate-source
Current Rating255 A continuous drain current at VGS = 10 V, Tmb = 25 °C
On-Resistance1.8 mOhm typ / 2.28 mOhm max RDSon at VGS = 10 V, ID = 25 A
Power Dissipation341 W total power dissipation at Tmb = 25 °C
Avalanche Ruggedness732 mJ non-repetitive drain-source avalanche energy
Safe Operating AreaFully optimized SOA for superior linear mode operation
Temperature Grade-55 °C to +175 °C junction temperature, 175 °C qualified
Package / CaseLFPAK88 (SOT1235), 4 leads, 2 mm pitch, 8.00 × 8.00 × 1.60 mm

Power Features & Applications

  • Application-specific MOSFET tuned for hotswap, load switch and e-fuse duty
  • Very low 2.28 mOhm max RDSon minimizes I2R conduction losses
  • Enhanced Safe Operating Area for superior linear mode operation
  • 255 A continuous and 1020 A pulsed current capability
  • High-reliability copper-clip LFPAK88 package qualified to 175 °C
  • 732 mJ avalanche energy rating for robust inrush events

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