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PSMN2R3-100SSE is a Nexperia application-specific N-channel MOSFET for hotswap and soft start, delivering 100 V blocking with 2.3 mOhm (2.28 mOhm max) RDSon, 255 A drain current and 341 W dissipation in the copper-clip LFPAK88 (SOT1235) package qualified to 175 °C. It complements hot-swap controllers on 48 V backplane systems.
| Parameter | Value / Specification |
|---|---|
| Device Type | N-channel enhancement mode ASFET optimized for hotswap and soft start |
| Voltage Rating | 100 V drain-source voltage (VDS); ±20 V gate-source |
| Current Rating | 255 A continuous drain current at VGS = 10 V, Tmb = 25 °C |
| On-Resistance | 1.8 mOhm typ / 2.28 mOhm max RDSon at VGS = 10 V, ID = 25 A |
| Power Dissipation | 341 W total power dissipation at Tmb = 25 °C |
| Avalanche Ruggedness | 732 mJ non-repetitive drain-source avalanche energy |
| Safe Operating Area | Fully optimized SOA for superior linear mode operation |
| Temperature Grade | -55 °C to +175 °C junction temperature, 175 °C qualified |
| Package / Case | LFPAK88 (SOT1235), 4 leads, 2 mm pitch, 8.00 × 8.00 × 1.60 mm |
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