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RFQ ListingDiscrete Semiconductors
IRF9530NPBF is a P-Channel MOSFET in Infineon's HEXFET family, delivered in a PG-TO220-3-904 package. drain-source voltage (vds): -100 V; continuous drain current (id): -14 A; rds(on) max (@10v): 200 mΩ. It is qualified for automotive and industrial environments where functional safety and reliable power or control matter.
ManufacturerInfineon Technologies
PackagePG-TO220-3-904, 3-pin
SeriesHEXFET
Power IC Specifications
| Parameter | Value / Specification |
|---|---|
| Exact Part Number | IRF9530NPBF |
| Manufacturer | Infineon Technologies |
| Product Category | Power Discretes |
| Drain-Source Voltage (VDS) | P-channel HEXFET design allows high-side switching without a costly charge-pump driver circuit. |
| Continuous Drain Current (ID) | P-channel HEXFET design allows high-side switching without a costly charge-pump driver circuit. |
| RDS(on) max (@10V) | 200 mΩ |
| Gate Threshold Voltage (VGS(th)) | -3 V (-2 to -4 V) |
| Power Dissipation (Ptot) | P-channel HEXFET design allows high-side switching without a costly charge-pump driver circuit. |
| Operating Temperature | -55°C to 175°C |
| Package / Pins | PG-TO220-3-904, 3-pin |
| Technology | HEXFET, planar cell |
| Total Gate Charge (QG typ) | 38.7 nC |
| Max Gate-Source Voltage (VGS) | P-channel HEXFET design allows high-side switching without a costly charge-pump driver circuit. |
| Package / Case | PG-TO220-3-904, 3-pin |
| Function / Topology | P-Channel MOSFET |
| Input Voltage | Application-dependent input range; verify against datasheet |
| Output Rating | -100 V / -14 A |
| Output Current | HEXFET output rating and load capability |
| Package / Orderable Variant | PG-TO220-3-904, 3-pin; exact suffix IRF9530NPBF |
Power Features & Applications
- P-channel HEXFET design allows high-side switching without a costly charge-pump driver circuit.
- Planar cell structure provides a wide safe operating area for robust, reliable power switching performance.
- Industry-standard TO-220 through-hole package supports simple heat-sink mounting and drop-in replacement use.
- 200 mΩ RDS(on) at 10 V gate drive balances conduction loss with easy drive requirements.
- JEDEC-qualified process ensures broad availability and proven reliability across industrial power applications.
- -100 V rating suits telecom, inverter and load-switch circuits needing robust P-channel protection.
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Frequently Asked Questions
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