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IPL60R065P7

Brand: Infineon

IPL60R065P7 is the Infineon CoolMOS P7 600 V N-channel superjunction power MOSFET in ThinPAK 8 × 8 (VSON-4) surface-mount package. It delivers 65 mΩ maximum on-resistance, 41 A continuous drain current, 45 nC typical gate charge and 201 W power dissipation for high-efficiency SMPS, PFC and adapter power supply applications requiring low conduction and switching losses.

Stock & Date Code

Brand Part Number Qty D/C Note
Infineon IPL60R065P7 6,000 26+ Infineon Technologies IPL60R065P7 Infineon CoolMOS P7 N-channel power MOSFET, 600 V, 65 mOhm RDS(on) max, 41 A ID, ThinPAK 8×8 (VSON-4) package, superjunction technology for high-efficiency SMPS and PFC.; confirm date code, lot and packing condition by RFQ.

Listed stock and date code are subject to final RFQ confirmation.

Power IC Specifications

ParameterValue / Specification
Device TypeN-channel enhancement-mode superjunction power MOSFET, CoolMOS P7 technology
Voltage RatingVDS 600 V, VGS ±20 V
Current RatingID 41 A at TC=25°C, ID_pulse 123 A
On-Resistance RDS(on)65 mΩ mt VGS=10 V, ID=16.1 A, TJ=25°C
Total Gate Charge Qg45 nC typical at VGS=10 V, VDS=400 V
Power Dissipation201 W at TC=25°C
Input Capacitance Ciss2895 pF typical at VDS=400 V, f=1 MHz
Switching Performancetr 9 ns, tf 5 ns typical; body diode trr 500 ns, Qrr 9.5 µC
Operating Temperature-55°C to +150°C (TJ)
Package / CaseThinPAK 8×8 (VSON-4)

Power Features & Applications

  • IPL60R065P7 is the Infineon CoolMOS P7 600 V N-channel superjunction power MOSFET with 65 mΩ maximum on-resistance in ThinPAK 8×8 surface-mount package
  • 600 V drain-source rating with ±20 V gate-source voltage covers off-line SMPS, PFC and adapter power supply primary-side switching applications
  • 41 A continuous drain current at TC=25°C and 123 A pulse current deliver high-current capability for compact high-density power converter designs
  • 65 mΩ max RDS(on) at VGS=10 V and 45 nC typical gate charge provide an optimized balance of low conduction loss and fast switching efficiency
  • 201 W power dissipation at TC=25°C and -55°C to +150°C junction temperature range support demanding thermal environments with appropriate heatsinking
  • 2895 pF typical input capacitance with 9 ns rise and 5 ns fall times enable high-frequency operation with reduced switching losses in resonant topologies
  • Body diode with 500 ns typical reverse recovery time and 9.5 µC reverse recovery charge suits hard-switching and ZVS bridge converter topologies

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Frequently Asked Questions

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