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RFQ ListingDiscrete Semiconductors
Brand: Infineon

BSC012N06NS

N-Channel MOSFET

BSC012N06NS is an Infineon OptiMOS 5 N-channel power MOSFET rated 60 V and 100 A, housed in a PG-TSON-8 (SuperSO8 5 × 6 mm) package. Its 1.2 mΩ RDS(on) and low reverse-recovery charge suit synchronous rectification, telecom and server power.

ManufacturerInfineon Technologies
PackagePG-TSON-8 (SuperSO8 5 × 6)
SeriesOptiMOS 5

Power IC Specifications

ParameterValue / Specification
Device TypeSingle N-channel enhancement-mode MOSFET
Drain-Source Voltage60 V
Continuous Drain Current100 A (max)
RDS(on)1.2 mΩ (max at 10 V)
Gate Charge115 nC (typ at 10 V)
TechnologyOptiMOS 5
Package / CasePG-TSON-8 (SuperSO8 5 × 6)
VGS±20 V
Operating Temperature-55°C to +175°C

Power Features & Applications

  • 60 V / 100 A OptiMOS 5 N-channel MOSFET
  • 1.2 mΩ RDS(on) minimizes conduction loss
  • Low Qrr improves synchronous-rectifier efficiency
  • PG-TSON-8 (SuperSO8 5x6) defines the board footprint and ordering package
  • 175°C operating temperature raises reliability
  • Fused leads enhance solder-joint robustness
  • Exact ordering suffix retained for BOM and package matching

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Frequently Asked Questions

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