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IHW30N160R5

Brand: Infineon

IHW30N160R5 is the Infineon RC-H5 reverse conducting IGBT with monolithic anti-parallel body diode in TO-247 through-hole package. Rated at 1600 V VCES, 30 A IC at 100°C, with 1.70 V typical saturation voltage and up to +175°C junction temperature, it targets soft-switching induction heating, resonant converter and welding inverter applications where integrated diode reduces parts count and stray inductance.

Stock & Date Code

Brand Part Number Qty D/C Note
Infineon IHW30N160R5 10,000 26+ Infineon Technologies IHW30N160R5 Infineon RC-H5 reverse conducting IGBT with monolithic body diode, 1600 V VCES, 30 A IC, TO-247 package, optimized for soft-switching induction heating and resonant converter applications.; confirm date code, lot and packing condition by RFQ.

Listed stock and date code are subject to final RFQ confirmation.

Power IC Specifications

ParameterValue / Specification
Device TypeN-channel reverse conducting IGBT with monolithic anti-parallel diode, RC-H5 technology
Voltage RatingVCES 1600 V, VGE ±20 V
Current RatingIC 30 A at TC=100°C, IC_pulse 90 A
Saturation Voltage VCE(sat)1.70 V typical at IC=30 A, VGE=15 V, TJ=25°C
Total Gate Charge Qg185 nC typical at VGE=15 V
Power Dissipation306 W at TC=25°C
Switching EnergyEon 2.55 mJ, Eoff 0.75 mJ typical at IC=30 A, VCE=600 V, TJ=175°C
Diode Forward Voltage VF1.65 V typical at IF=30 A, TJ=25°C
Operating Temperature-40°C to +175°C (TJ, m )
Package / CaseTO-247-3

Power Features & Applications

  • IHW30N160R5 is the Infineon RC-H5 reverse conducting IGBT with monolithic body diode, rated 1600 V VCES and 30 A IC in TO-247 through-hole package
  • 1600 V collector-emitter blocking voltage with ±20 V gate-emitter rating addresses high-voltage induction heating, resonant converter and welding inverter applications
  • 30 A continuous collector current at TC=100°C with 90 A pulse capability and monolithic anti-parallel diode integration reduces component count in bridge topologies
  • 1.70 V typical VCE(sat) at 30 A and 185 nC typical gate charge provide low conduction loss with moderate gate drive requirements for soft-switching operation
  • 306 W power dissipation at TC=25°C and +175°C maximum junction temperature with TO-247 package support high-power thermal design with standard heatsink mounting
  • 2.55 mJ turn-on and 0.75 mJ turn-off switching energy at 30 A 600 V 175°C deliver fast tail-current-free switching optimized for resonant and ZVS converter stages
  • RC-H5 reverse conducting technology integrates the freewheeling diode monolithically — eliminating external diode matching and reducing stray inductance in bridge leg layouts

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Frequently Asked Questions

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