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IRLML2502TRPBF

Brand: Infineon

IRLML2502TRPBF is a N-channel Power MOSFET in Infineon's HEXFET family, delivered in a 3-pin Micro3 / SOT-23, 2.8–3.04×2.1–2.64 mm, 0.95 mm pitch package. function / topology: Single N-channel enhancement-mode power MOSFET; input voltage: Drain-source rating 20 V; gate-source rating ±12 V; output current: 4.2 A at VGS=4.5 V, TA=25°C. Last-time-buy date 2026-06-30; nearing discontinuation — confirm current stock, lead time and date code by RFQ.

Stock & Date Code

Brand Part Number Qty D/C Note
Infineon IRLML2502TRPBF 30,000 26+ Infineon Technologies IRLML2502TRPBF N-channel 20 V MOSFET, 45 mΩ max at VGS=4.5 V, ID=4.2 A, TJ=25°C; confirm date code, lot and packing condition by RFQ.

Listed stock and date code are subject to final RFQ confirmation.

Power IC Specifications

ParameterValue / Specification
Function / TopologySingle N-channel enhancement-mode power MOSFET
Input VoltageDrain-source rating 20 V; gate-source rating ±12 V
Output Current4.2 A at VGS=4.5 V, TA=25°C
Package / Case3-pin Micro3 / SOT-23, 2.8–3.04×2.1–2.64 mm, 0.95 mm pitch
On Resistance45 mΩ mt VGS=4.5 V, ID=4.2 A, TJ=25°C; 80 mΩ mt VGS=2.5 V, ID=3.6 A
Gate Threshold0.60–1.20 V
Total Gate Charge8 nC typical / 12 nC mt ID=4.0 A
Power Dissipation1.25 W at TA=25°C
Junction Temperature-55°C to +150°C
LifecycleNo longer manufactured / EOL

Power Features & Applications

  • IRLML2502TRPBF is the high-current-low-voltage HEXFET option with 20 V drain-source rating
  • 45 mΩ max at VGS=4.5 V, ID=4.2 A, TJ=25°C; 80 mΩ max at VGS=2.5 V, ID=3.6 A defines conduction resistance under stated gate, current and temperature conditions
  • 4.2 A at VGS=4.5 V, TA=25°C is the documented current rating and thermal condition
  • 8 nC typical / 12 nC max at ID=4.0 A characterizes switching-drive demand for gate-driver selection
  • 3-pin Micro3 / SOT-23, 2.8–3.04×2.1–2.64 mm, 0.95 mm pitch provides the exact board-level thermal and footprint configuration
  • 1.25 W at TA=25°C power dissipation rating applies under the documented thermal condition
  • Single N-channel configuration targets efficient power switching

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