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RFQ ListingDiscrete Semiconductors
Brand: Infineon

IRF640NPBF

N-Channel MOSFET

IRF640NPBF is a N-Channel MOSFET in Infineon's HEXFET family, delivered in a PG-TO220-3 package. drain-source voltage (vds): 200 V; continuous drain current (id): 18 A; rds(on) max: 150 mΩ @ VGS = 10 V. Power MOSFET under tight supply — confirm current stock, lead time and date code by RFQ.

ManufacturerInfineon Technologies
PackagePG-TO220-3, 3 pins
SeriesHEXFET

Power IC Specifications

ParameterValue / Specification
Exact Part NumberIRF640NPBF
ManufacturerInfineon Technologies
Product CategoryPower Discretes
Drain-Source Voltage (VDS)200 V N-channel HEXFET MOSFET rated for 18 A continuous drain current.
Continuous Drain Current (ID)200 V N-channel HEXFET MOSFET rated for 18 A continuous drain current.
RDS(on) max150 mΩ @ VGS = 10 V
Gate Threshold Voltage (VGS(th))2.0 - 4.0 V
Power Dissipation (Ptot)200 V N-channel HEXFET MOSFET rated for 18 A continuous drain current.
TechnologyHEXFET
Operating Temperature-55 to 175 °C
Package / PinsPG-TO220-3, 3 pins
QualificationJEDEC standard qualification (Industrial)
Package / CasePG-TO220-3, 3 pins
Function / TopologyN-Channel MOSFET
Input VoltageApplication-dependent input range; verify against datasheet
Output Rating200 V / 18 A
Output CurrentHEXFET output rating and load capability
Package / Orderable VariantPG-TO220-3, 3 pins; exact suffix IRF640NPBF

Power Features & Applications

  • 200 V N-channel HEXFET MOSFET rated for 18 A continuous drain current.
  • Low on-resistance of 150 mΩ minimizes conduction loss at moderate currents.
  • Fully avalanche rated for reliable operation with inductive loads.
  • Dynamic dv/dt rating supports fast switching transitions.
  • Lead-free, RoHS-compliant TO-220AB package for through-hole assembly.
  • Suited to offline power supplies, lighting and general-purpose switching.

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Frequently Asked Questions

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