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RFQ ListingDiscrete Semiconductors
Brand: Infineon

IRF4905PBF

P-Channel MOSFET

IRF4905PBF is a P-Channel MOSFET in Infineon's HEXFET family, delivered in a PG-TO220-3 package. drain-source voltage (vds): -55 V; continuous drain current (id): -74 A; rds(on) max: 20 mΩ @ VGS = 10 V. P-channel MOSFET, a hot part number — confirm current stock, lead time and date code by RFQ.

ManufacturerInfineon Technologies
PackagePG-TO220-3, 3 pins
SeriesHEXFET

Power IC Specifications

ParameterValue / Specification
Exact Part NumberIRF4905PBF
ManufacturerInfineon Technologies
Product CategoryPower Discretes
Drain-Source Voltage (VDS)P-channel HEXFET MOSFET rated for -55 V and -74 A continuous current.
Continuous Drain Current (ID)P-channel HEXFET MOSFET rated for -55 V and -74 A continuous current.
RDS(on) max20 mΩ @ VGS = 10 V
Gate Threshold Voltage (VGS(th))-2.0 to -4.0 V
Power Dissipation (Ptot)P-channel HEXFET MOSFET rated for -55 V and -74 A continuous current.
TechnologyHEXFET
Operating Temperature-55 to 175 °C
Package / PinsPG-TO220-3, 3 pins
QualificationJEDEC standard qualification (Industrial)
Package / CasePG-TO220-3, 3 pins
Function / TopologyP-Channel MOSFET
Input VoltageApplication-dependent input range; verify against datasheet
Output Rating-55 V / -74 A
Output CurrentHEXFET output rating and load capability
Package / Orderable VariantPG-TO220-3, 3 pins; exact suffix IRF4905PBF

Power Features & Applications

  • P-channel HEXFET MOSFET rated for -55 V and -74 A continuous current.
  • Low on-resistance of 20 mΩ simplifies high-side switching without a charge pump.
  • Fully avalanche rated for rugged inductive-load operation.
  • Lead-free, RoHS-compliant TO-220AB package for through-hole assembly.
  • Optimized for low gate charge and fast switching transitions.
  • Commonly used for battery switching and OR-ing in power systems.

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Frequently Asked Questions

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