Quality Confirmation
Date code, batch, package, label and marking details are checked before shipment. Inspection photos and third-party inspection support are available when required.
IRF3205ZPBF is a N-Channel MOSFET in Infineon's HEXFET family, delivered in a PG-TO220-3-904 package. drain-source voltage (vds): 55 V; continuous drain current (id): 110 A; rds(on) max (@10v): 8 mΩ. It is qualified for automotive and industrial environments where functional safety and reliable power or control matter.
| Parameter | Value / Specification |
|---|---|
| Exact Part Number | IRF3205ZPBF |
| Manufacturer | Infineon Technologies |
| Product Category | Power Discretes |
| Drain-Source Voltage (VDS) | Planar cell structure delivers wide safe operating area for rugged, high-current switching in industrial systems. |
| Continuous Drain Current (ID) | Planar cell structure delivers wide safe operating area for rugged, high-current switching in industrial systems. |
| RDS(on) max (@10V) | 8 mΩ |
| Gate Threshold Voltage (VGS(th)) | 3 V (2-4 V) |
| Power Dissipation (Ptot) | Planar cell structure delivers wide safe operating area for rugged, high-current switching in industrial systems. |
| Operating Temperature | -55°C to 175°C |
| Package / Pins | PG-TO220-3-904, 3-pin |
| Technology | HEXFET, planar cell |
| Total Gate Charge (QG typ) | 97.3 nC |
| Max Gate-Source Voltage (VGS) | Planar cell structure delivers wide safe operating area for rugged, high-current switching in industrial systems. |
| Package / Case | PG-TO220-3-904, 3-pin |
| Function / Topology | N-Channel MOSFET |
| Input Voltage | Application-dependent input range; verify against datasheet |
| Output Rating | 55 V / 110 A |
| Output Current | HEXFET output rating and load capability |
| Package / Orderable Variant | PG-TO220-3-904, 3-pin; exact suffix IRF3205ZPBF |
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