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IPD90P04P4L-04

Brand: Infineon

IPD90P04P4L-04 is a P-Channel MOSFET in Infineon's OptiMOS family, delivered in a PG-TO252-3 package. drain-source voltage (vds): -40 V; continuous drain current (id): -90 A; rds(on) max (@10v): 4.7 mΩ. It is qualified for automotive and industrial environments where functional safety and reliable power or control matter.

Stock & Date Code

Brand Part Number Qty D/C Note
Infineon IPD90P04P4L-04 10,000 26+ P-Channel MOSFET stock for RFQ-confirmed production, repair or allocation-driven sourcing

Listed stock and date code are subject to final RFQ confirmation.

Power IC Specifications

ParameterValue / Specification
Exact Part NumberIPD90P04P4L-04
ManufacturerInfineon Technologies
Product CategoryPower Discretes
Drain-Source Voltage (VDS)-40 V
Continuous Drain Current (ID)-90 A
RDS(on) max (@10V)4.7 mΩ
Gate Threshold Voltage (VGS(th))-2 V (-1 to -3 V)
Power Dissipation (Ptot)79 W
Operating Temperature-55 °C to 175 °C
Package / PinsPG-TO252-3 (DPAK), 3-pin
TechnologyOptiMOS P-channel
Pulsed Drain Current (IDpuls)-360 A (typ)
QualificationAEC-Q101 automotive
Package / CasePG-TO252-3
Function / TopologyP-Channel MOSFET
Input VoltageApplication-dependent input range; verify against datasheet
Output Rating-40 V / -90 A
Output Current-90 A
Package / Orderable VariantPG-TO252-3 (DPAK), 3-pin; exact suffix IPD90P04P4L 04

Power Features & Applications

  • P-channel -40 V, -90 A MOSFET enables high-side switching without a charge-pump driver circuit.
  • Ultra-low 4.7 mΩ RDS(on) minimizes conduction loss and reduces required heat-sink size.
  • AEC-Q101 automotive qualified for reliable 175 °C operation in harsh under-hood environments.
  • 100% avalanche tested guarantees ruggedness against inductive load demagnetization energy.
  • Green, halogen-free DPAK package is MSL1 rated up to 260 °C peak reflow soldering temperature.
  • Optimized gate charge supports efficient drive from 5 V and 12 V logic-level source voltages.

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Frequently Asked Questions

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