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MT29GZ6A6BPIET53AAT.112

Brand: Micron

The MT29GZ6A6BPIET53AAT.112 is a Micron eMMC-based Multi-Chip Package (MCP) integrating 8 Gb SLC NAND flash and 8 Gb LPDDR4 DRAM in a 149-VFBGA package. The SLC NAND delivers high-endurance, industrial-grade reliability, while the LPDDR4 provides 1866 MHz memory bandwidth for real-time embedded processing. Qualified to AEC-Q100 automotive standards and rated for -40 °C to +105 °C, this MCP is purpose-built for automotive ADAS, telematics, and harsh-environment IoT applications.

Stock & Date Code

Brand Part Number Qty D/C Note
Micron MT29GZ6A6BPIET53AAT.112 3,600 26+ Micron MT29GZ6A6BPIET53AAT.112 eMMC-based Multi-Chip Package; confirm date code, lot and packing condition by RFQ.

Listed stock and date code are subject to final RFQ confirmation.

Memory Specifications

ParameterValue / Specification
Exact Part NumberMT29GZ6A6BPIET53AAT.112
ManufacturerMicron Technology
Product CategoryManaged NAND + DRAM MCP
Memory TypeeMMC-based MCP: SLC NAND Flash (non-volatile) + LPDDR4 SDRAM (volatile), ONFI interface
Density / Capacity8 Gb SLC NAND flash + 8 Gb LPDDR4 DRAM, 16 Gb total combined in single package
Organization / Data WidthNAND: 1 8-bit ONFI; LPDDR4: 512 16-bit; 149-ball VFBGA unified pinout
Speed / Data RateClock frequency 1866 MHz (LPDDR4), access time 25 ns, write cycle 30 ns via ONFI NAND interface
Supply Voltage1.06 V to 1.17 V (LPDDR4 core), 1.7 V to 1.95 V (NAND I/O), dual-rail power architecture
Operating Temperature-40 °C to +105 °C (TA), AEC-Q100 automotive qualified, Grade 2
Package / Case149-VFBGA (8 × 9.5 mm, 0.5 mm pitch, SMT, B /Tray)

Memory Features & Applications

  • Single-package MCP: 8 Gb high-endurance SLC NAND + 8 Gb LPDDR4 in 149-VFBGA (8 × 9.5 mm), AEC-Q100 qualified for automotive applications
  • SLC NAND with ONFI interface delivers superior endurance and data retention versus MLC/TLC for mission-critical embedded code and data storage
  • LPDDR4 DRAM at 1866 MHz with 512 16 organization providing 29.9 GB/s peak bandwidth for real-time sensor fusion and ADAS processing
  • Extended temperature range -40 °C to +105 °C (TA) with 25 ns access time ensures reliable operation in automotive under-hood and harsh industrial environments
  • Dual-rail supply (1.06–1.17 V LPDDR4 core / 1.7–1.95 V NAND I/O) with integrated power management for simplified system design
  • Ideal for automotive ADAS ECUs, telematics control units, industrial IoT gateways, and harsh-environment embedded vision systems

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Frequently Asked Questions

Is MT29GZ6A6BPIET53AAT.112 available from LimChip?

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What should buyers check before ordering MT29GZ6A6BPIET53AAT.112?

Buyers should check memory density, speed suffix, package, temperature grade and batch traceability for MT29GZ6A6BPIET53AAT.112, together with live stock and traceable supply.

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