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BSC123N08NS3G

Brand: Infineon

BSC123N08NS3G is the eighty-volt-balanced-charge OptiMOS 3 single N-channel MOSFET rated at 80 V. Its documented 12.3 mΩ max at VGS=10 V, ID=33 A, TJ=25°C, 55 A at VGS=10 V, TC=25°C current condition and 19 nC typical at VDD=40 V, ID=20 A gate charge define the key selection tradeoffs in a 8-pin SuperSO8 5×6, 5×6 mm package.

Stock & Date Code

Brand Part Number Qty D/C Note
Infineon BSC123N08NS3G 10,000 26+ Infineon Technologies BSC123N08NS3G N-channel 80 V MOSFET, 12.3 mΩ max at VGS=10 V, ID=33 A, TJ=25°C; confirm date code, lot and packing condition by RFQ.

Listed stock and date code are subject to final RFQ confirmation.

Power IC Specifications

ParameterValue / Specification
Function / TopologySingle N-channel enhancement-mode power MOSFET
Input VoltageDrain-source rating 80 V; gate-source rating ±20 V
Output Current55 A at VGS=10 V, TC=25°C; 35 A at TC=100°C
Package / Case8-pin SuperSO8 5×6, 5×6 mm
On Resistance12.3 mΩ mt VGS=10 V, ID=33 A, TJ=25°C; 24 mΩ mt VGS=6 V, ID=16 A
Gate Threshold2.0–3.5 V
Total Gate Charge19 nC typical at VDD=40 V, ID=20 A
Power Dissipation66 W at TC=25°C
Junction Temperature-55°C to +150°C
LifecycleActive

Power Features & Applications

  • BSC123N08NS3G is the eighty-volt-balanced-charge OptiMOS 3 option with 80 V drain-source rating
  • 12.3 mΩ max at VGS=10 V, ID=33 A, TJ=25°C; 24 mΩ max at VGS=6 V, ID=16 A defines conduction resistance under stated gate, current and temperature conditions
  • 55 A at VGS=10 V, TC=25°C; 35 A at TC=100°C is the documented current rating and thermal condition
  • 19 nC typical at VDD=40 V, ID=20 A characterizes switching-drive demand for gate-driver selection
  • 8-pin SuperSO8 5×6, 5×6 mm provides the exact board-level thermal and footprint configuration
  • 66 W at TC=25°C power dissipation rating applies under the documented thermal condition
  • Single N-channel configuration targets efficient power switching

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Frequently Asked Questions

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