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RFQ ListingDiscrete Semiconductors
IKW75N65EH5 is a IGBT in Infineon's TRENCHSTOP 5 family, delivered in a PG-TO247-3-41 package. collector-emitter voltage (vces): 650 V; continuous collector current (ic): 75 A @100°C (90 A @25°C); collector-emitter saturation (vce(sat)): 1.65 V. It is qualified for automotive and industrial environments where functional safety and reliable power or control matter.
ManufacturerInfineon Technologies
PackagePG-TO247-3-41, 3-pin
SeriesTRENCHSTOP 5
Power IC Specifications
| Parameter | Value / Specification |
|---|---|
| Exact Part Number | IKW75N65EH5 |
| Manufacturer | Infineon Technologies |
| Product Category | Power Discretes |
| Collector-Emitter Voltage (VCES) | 650 V TRENCHSTOP 5 technology delivers best-in-class hard-switching efficiency for 30-100 kHz converters. |
| Continuous Collector Current (IC) | 75 A @100°C (90 A @25°C) |
| Collector-Emitter Saturation (VCE(sat)) | 1.65 V |
| Power Dissipation (Ptot) | 650 V TRENCHSTOP 5 technology delivers best-in-class hard-switching efficiency for 30-100 kHz converters. |
| Operating Temperature | -40°C to 175°C |
| Package / Pins | PG-TO247-3-41, 3-pin |
| Technology | TRENCHSTOP 5 + RAPID 1 diode |
| Pulsed Collector Current (ICpuls) | 650 V TRENCHSTOP 5 technology delivers best-in-class hard-switching efficiency for 30-100 kHz converters. |
| Switching Frequency | 650 V TRENCHSTOP 5 technology delivers best-in-class hard-switching efficiency for 30-100 kHz converters. |
| Total Gate Charge (QG) | 650 V TRENCHSTOP 5 technology delivers best-in-class hard-switching efficiency for 30-100 kHz converters. |
| Package / Case | PG-TO247-3-41, 3-pin |
| Function / Topology | IGBT |
| Input Voltage | Application-dependent input range; verify against datasheet |
| Output Rating | 75 A @100°C (90 A @25°C) |
| Output Current | 75 A @100°C (90 A @25°C) |
| Package / Orderable Variant | PG-TO247-3-41, 3-pin; exact suffix IKW75N65EH5 |
Power Features & Applications
- 650 V TRENCHSTOP 5 technology delivers best-in-class hard-switching efficiency for 30-100 kHz converters.
- Low 1.65 V VCE(sat) reduces conduction loss versus previous HighSpeed 3 IGBT generations.
- Co-packed RAPID 1 fast soft diode provides integrated freewheeling with low reverse recovery charge.
- 2.5x lower gate charge cuts driver losses and simplifies gate drive circuit design requirements.
- Factor 2 reduced switching losses improves efficiency in UPS, EV charging and solar inverter systems.
- Mild positive VCE(sat) temperature coefficient supports safe parallel operation of multiple devices.
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Frequently Asked Questions
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