All Parts

BSC010N04LSIATMA1

Mfr. #:
BSC010N04LSIATMA1
Mfr.:
Infineon Technologies
Product Type:
N-Channel MOSFET
Series:
OptiMOS
Package / Case:
8-TDSON
Description:
40 V logic-level N-channel power MOSFET with an integrated Schottky-like diode.

Product Attributes

AttributeValue
PolarityN-channel, logic level
Drain-source Voltage40 V
Continuous Drain Current275 A at VGS = 10 V, TC = 25 C; absolute maximum, thermal derating required
Pulsed Drain Current1100 A at TC = 25 C; pulse/SOA limits apply
Gate-source Voltage+/-20 V maximum
RDS(on) at 10 V1.05 milliohm maximum at ID = 50 A, Tj = 25 C
RDS(on) at 4.5 V1.4 milliohm maximum at ID = 50 A, Tj = 25 C
Gate Threshold Voltage1.2 to 2.0 V at ID = 250 uA
Total Gate Charge87 nC typical at VDD = 20 V, ID = 50 A, VGS = 0 to 10 V
Junction Temperature-55 to +150 C
Thermal ResistanceJunction-to-case bottom: 0.9 K/W maximum
Integrated DiodeMonolithic Schottky-like diode
Package DetailsPG-TDSON-8, TDSON-8 FL / SuperSO8; nominal 5 x 6 mm

Product Description

BSC010N04LSIATMA1 is a 40 V logic-level N-channel MOSFET with a monolithic Schottky-like diode, intended for synchronous rectification. The source connection is enlarged in the SuperSO8 FL package.

On-resistance depends on gate drive: the data sheet specifies a maximum 1.05 mΩ at 10 V and 1.4 mΩ at 4.5 V, both at the stated 50 A and 25°C conditions. The 275 A headline is a case-temperature rating, so board thermal design and safe operating limits govern practical current.

Quality · Shipping · Payment

Quality Confirmation

Pre-shipment checks cover batch, package, labels and markings. Inspection photos and third-party inspection support are available on request.

Shipping

Worldwide delivery is supported. Carrier, lead time and buyer-appointed forwarder requirements are confirmed with the quotation.

Payment

Payment method, currency and trade terms are subject to the formal quotation or proforma invoice.

See All