全部型号

BSC010N04LSIATMA1

制造商型号：
BSC010N04LSIATMA1
制造商：
Infineon Technologies
产品类型：
N-Channel MOSFET
系列：
OptiMOS
封装：
8-TDSON
描述：
40 V logic-level N-channel power MOSFET with an integrated Schottky-like diode.

产品属性

属性数值
PolarityN-channel, logic level
Drain-source Voltage40 V
Continuous Drain Current275 A at VGS = 10 V, TC = 25 C; absolute maximum, thermal derating required
Pulsed Drain Current1100 A at TC = 25 C; pulse/SOA limits apply
Gate-source Voltage+/-20 V maximum
RDS(on) at 10 V1.05 milliohm maximum at ID = 50 A, Tj = 25 C
RDS(on) at 4.5 V1.4 milliohm maximum at ID = 50 A, Tj = 25 C
Gate Threshold Voltage1.2 to 2.0 V at ID = 250 uA
Total Gate Charge87 nC typical at VDD = 20 V, ID = 50 A, VGS = 0 to 10 V
Junction Temperature-55 to +150 C
Thermal ResistanceJunction-to-case bottom: 0.9 K/W maximum
Integrated DiodeMonolithic Schottky-like diode
Package DetailsPG-TDSON-8, TDSON-8 FL / SuperSO8; nominal 5 x 6 mm

产品描述

BSC010N04LSIATMA1 is a 40 V logic-level N-channel MOSFET with a monolithic Schottky-like diode, intended for synchronous rectification. The source connection is enlarged in the SuperSO8 FL package.

On-resistance depends on gate drive: the data sheet specifies a maximum 1.05 mΩ at 10 V and 1.4 mΩ at 4.5 V, both at the stated 50 A and 25°C conditions. The 275 A headline is a case-temperature rating, so board thermal design and safe operating limits govern practical current.

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