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RFQ ListingDiscrete Semiconductors
Brand: Infineon

IRFP4668PBF

N-Channel MOSFET

IRFP4668PBF is a N-Channel MOSFET in Infineon's StrongIRFET family, delivered in a PG-TO247-3 package. drain-source voltage (vds): 200 V; continuous drain current (id): 130 A; rds(on) max: 11 mΩ @ VGS = 10 V. High-power MOSFET under tight supply — confirm current stock, lead time and date code by RFQ.

ManufacturerInfineon Technologies
PackagePG-TO247-3, 3 pins
SeriesStrongIRFET

Power IC Specifications

ParameterValue / Specification
Exact Part NumberIRFP4668PBF
ManufacturerInfineon Technologies
Product CategoryPower Discretes
Drain-Source Voltage (VDS)200 V StrongIRFET N-channel MOSFET rated for 130 A continuous drain current.
Continuous Drain Current (ID)200 V StrongIRFET N-channel MOSFET rated for 130 A continuous drain current.
RDS(on) max11 mΩ @ VGS = 10 V
Gate Threshold Voltage (VGS(th))2.0 - 4.0 V
Power Dissipation (Ptot)200 V StrongIRFET N-channel MOSFET rated for 130 A continuous drain current.
TechnologyStrongIRFET
Operating Temperature-55 to 175 °C
Package / PinsPG-TO247-3, 3 pins
QualificationJEDEC standard qualification (Industrial)
Package / CasePG-TO247-3, 3 pins
Function / TopologyN-Channel MOSFET
Input VoltageApplication-dependent input range; verify against datasheet
Output Rating200 V / 130 A
Output CurrentStrongIRFET output rating and load capability
Package / Orderable VariantPG-TO247-3, 3 pins; exact suffix IRFP4668PBF

Power Features & Applications

  • 200 V StrongIRFET N-channel MOSFET rated for 130 A continuous drain current.
  • On-resistance of 11 mΩ provides efficient conduction at high voltage.
  • TO-247AC package handles 375 W power dissipation.
  • Low gate charge supports fast switching in industrial power stages.
  • Lead-free, RoHS-compliant and halogen-free device.
  • Used in solar inverters, UPS and high-power DC-DC conversion.

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Frequently Asked Questions

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