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Brand: Infineon

IPB020N10N5

N-Channel MOSFET

IPB020N10N5 is a N-Channel MOSFET in Infineon's OptiMOS 5 family, delivered in a PG-TO263-3 package. drain-source voltage (vds): 100 V; continuous drain current (id): 176 A; rds(on) max: 2.0 mΩ (at VGS = 10 V). OptiMOS, high-current applications — confirm current stock, lead time and date code by RFQ.

ManufacturerInfineon Technologies
PackagePG-TO263-3, 3 pins
SeriesOptiMOS 5

Power IC Specifications

ParameterValue / Specification
Exact Part NumberIPB020N10N5
ManufacturerInfineon Technologies
Product CategoryPower Discretes
Drain-Source Voltage (VDS)Offers a low RDS(on) of 2.0 mΩ at VGS = 10 V in a D2PAK package.
Continuous Drain Current (ID)Offers a low RDS(on) of 2.0 mΩ at VGS = 10 V in a D2PAK package.
RDS(on) max2.0 mΩ (at VGS = 10 V)
Gate Charge (QG typ)Offers a low RDS(on) of 2.0 mΩ at VGS = 10 V in a D2PAK package.
Power Dissipation (Ptot)Offers a low RDS(on) of 2.0 mΩ at VGS = 10 V in a D2PAK package.
TechnologyOptiMOS 5
Operating Temperature-55 °C to 175 °C
Package / PinsPG-TO263-3, 3 pins
QualificationAEC-Q101 (Automotive)
Package / CasePG-TO263-3, 3 pins
Function / TopologyN-Channel MOSFET
Input VoltageApplication-dependent input range; verify against datasheet
Output Rating100 V / 176 A
Output CurrentOptiMOS output rating and load capability
Package / Orderable VariantPG-TO263-3, 3 pins; exact suffix IPB020N10N5

Power Features & Applications

  • Offers a low RDS(on) of 2.0 mΩ at VGS = 10 V in a D2PAK package.
  • Rated for 176 A continuous drain current for high-power stages.
  • Built on Infineon OptiMOS 5 technology with 168 nC typical gate charge.
  • AEC-Q101 qualified for automotive and industrial applications.
  • Housed in a through-hole-mountable PG-TO263-3 (D2PAK) package.
  • Provides 375 W power dissipation with a -55 to 175 °C temperature range.

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Frequently Asked Questions

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