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MT29F4G08ABBFAH4-IT:F

Mfr. #:
MT29F4G08ABBFAH4-IT:F
Mfr.:
Micron Technology
Product Type:
Parallel NAND Flash
Series:
MT29F
Package / Case:
63-VFBGA

Product Attributes

AttributeValue
Density4 Gb
Organization512M x 8
InterfaceAsynchronous parallel NAND; ONFI 1.0 compliant
Page Size4096 data bytes + 256 spare bytes
Supply Voltage1.7 to 1.95 V; 1.8 V nominal
Operating Temperature-40 to +85 C industrial
Memory TechnologySLC NAND Flash
Block Size64 pages
Read/Write Cycle Time30 ns minimum, tRC/tWC at 1.8 V
Page Read Time25 us maximum with on-die ECC disabled; 115 us maximum with on-die ECC enabled
Page Program Time200 us typical with on-die ECC disabled; 240 us typical with on-die ECC enabled
Block Erase Time2 ms typical
On-Die ECC8-bit internal ECC; disabled by default for this ordering option
Program/Erase Endurance100,000 cycles
Package Details63-ball VFBGA, h4; 9 x 11 x 1.0 mm

Product Details

MT29F4G08ABBFAH4-IT:F is part of the Micron MT29F family.

The device is specified at Asynchronous parallel NAND; ONFI 1.0 compliant.

Its series is described as follows: Parallel NAND flash provides high-density non-volatile storage over a wide interface.

The part appears in embedded storage and industrial equipment.

What matters here is the industrial screening: the same board can go into a cabinet without a second qualification cycle.

Within the family, this ordering code is the one specified for 4 Gb density.

The memory technology is SLC NAND Flash.

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