PSMNR51-25YLHX

制造商型号:
PSMNR51-25YLHX
制造商:
Nexperia
产品类型:
N-Channel MOSFET
系列:
NextPowerS3
封装:
LFPAK56E
描述:
25 V logic-level N-channel power MOSFET

产品属性

属性数值
PolarityN-channel enhancement mode
Drain-source Voltage25 V maximum rating
RDS(on)0.49 milliohm typical, 0.57 milliohm maximum at VGS = 10 V, ID = 25 A, Tj = 25 C
Gate DriveLogic level; optimized for 4.5 V
Avalanche Test100% tested at IAS = 190 A
Continuous Drain Current380 A maximum at VGS = 10 V, Tmb = 25°C; practical current limited by PCB, thermal design and temperature
Gate-source Voltage±20 V absolute maximum
RDS(on) at 4.5 V0.65 mΩ typical / 0.82 mΩ maximum at VGS = 4.5 V, ID = 25 A, Tj = 25°C; 1.46 mΩ maximum at Tj = 150°C
Gate Charge53 nC typical / 87 nC maximum at VGS = 4.5 V, VDS = 12 V, ID = 25 A
Power Dissipation333 W maximum at mounting-base temperature Tmb = 25°C
Junction Temperature−55 to +175°C absolute maximum operating junction range
Thermal Resistance0.33 K/W typical / 0.45 K/W maximum junction-to-mounting-base
Package DetailsLFPAK56E / Power-SO8, SOT1023; 4 leads and drain mounting base; 1.27 mm lead pitch

产品描述

This N-channel MOSFET is optimized for a 4.5 V gate drive, with on-resistance specified separately at 4.5 V and 10 V. Selecting a driver requires using the value at the actual gate voltage and junction temperature rather than the lowest room-temperature number alone.

The device has a 380 A drain-current rating under the manufacturer’s mounting-base conditions, but practical continuous current depends on PCB layout, cooling and operating temperature. Its LFPAK56E package uses an exposed drain mounting base to provide a low-resistance thermal path.

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