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LIMCHIP CO., LIMITED
Professional Electronic Components Distributor · HK · SZ · SG · Original Stock · Global Shipping
H9JCNNNCP3MLYR-N6E
Brand: SK hynix
H9JCNNNCP3MLYR-N6E is an SK hynix 4 GB (32 Gb) LPDDR5 SDRAM organized x16 in a 315-ball FBGA package. LimChip stocks this exact ordering code; confirm date code and tray condition by RFQ.
Stock & Date Code
| Brand | Part Number | Qty | D/C | Note |
|---|---|---|---|---|
| SK hynix | H9JCNNNCP3MLYR-N6E | 10,000 | 26+ | H9JCNNNCP3MLYR-N6E (4 GB (32 Gb) LPDDR5 SDRAM, x16, 1.8 V (VDD1) / 1.05 V (VDD2) / 0.5 V (VDDQ), 315-ball FBGA); confirm date code, lot and packing condition by RFQ. |
Listed stock and date code are subject to final RFQ confirmation.
Memory Specifications
| Parameter | Value / Specification |
|---|---|
| Memory Type | LPDDR5 SDRAM |
| Density / Capacity | 4 GB (32 Gb) |
| Organization / Data Width | × 16 |
| Speed / Data Rate | 6400 Mbps (LPDDR5-6400) |
| Package / Case | 315-ball FBGA |
| Supply Voltage (VDD / VDDQ) | 1.8 V (VDD1) / 1.05 V (VDD2) / 0.5 V (VDDQ) |
| Number of Banks | 16 (4 bank group 4 banks) |
| Burst Length | 8 (with burst chop 4) |
| Prefetch | 8n / 16n prefetch |
| Temperature Range (Tcase) | Commercial (0 to 95 °C) |
| Refresh Cycle | 8192 refresh cycles / 64 ms (avg 7.8 µs @ 0–85 °C; 3.9 µs @ 85–95 °C) |
| Compliance | JEDEC LPDDR5 SDRAM; RoHS compliant |
Memory Features & Applications
- This 4 GB (32 Gb) LPDDR5 SDRAM delivers a 6400 Mbps data rate for bandwidth-intensive main-memory applications.
- Organized as x16, the interface suits memory buses in compute and networking equipment.
- It operates from a 1.8 V (VDD1) / 1.05 V (VDD2) / 0.5 V (VDDQ) supply, consistent with JEDEC LPDDR5 SDRAM specifications.
- Housed in a 315-ball FBGA package, it provides a compact, high-density footprint for space-constrained boards.
- Rated for the Commercial (0 to 95 °C) temperature range, it fits commercial-grade environments.
- JEDEC features include 16 (4 bank group 4 banks), 8n / 16n prefetch, on-die termination (ODT), ZQ calibration and per-DRAM addressability for robust signal integrity.
- Optional functions such as write leveling, data-bus inversion (DBI), CRC on writes and TCAR self-refresh improve reliability at speed.
Need Price & Availability for H9JCNNNCP3MLYR-N6E?
LimChip can confirm current price, date code, packing condition, lot traceability and shipment schedule for H9JCNNNCP3MLYR-N6E.
Listed stock is subject to final RFQ confirmation.
For faster RFQ confirmation, please include:
- Required quantity
- Target date code
- Package / case requirement
- Delivery country
- Company name and contact person
- Target price if available
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Quality, Shipping & Payment
Commercial and shipment details for H9JCNNNCP3MLYR-N6E are confirmed with the formal quotation.
Shipping
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Payment
Payment method, currency and trade terms are confirmed in the formal quotation or proforma invoice. Contact our sales team for the options available for your order.
Frequently Asked Questions
Is H9JCNNNCP3MLYR-N6E available from LimChip?
LimChip can confirm current availability, price, quantity, date code and lead time for H9JCNNNCP3MLYR-N6E by RFQ.
What should buyers check before ordering H9JCNNNCP3MLYR-N6E?
Buyers should check memory density, speed suffix, package, temperature grade and batch traceability for H9JCNNNCP3MLYR-N6E, together with live stock and traceable supply.
How do I request a quote for H9JCNNNCP3MLYR-N6E?
Use the RFQ button and include required quantity, target date code, package/case requirement, delivery country, company name and contact details.