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K4AAG165WA-BCTD

Brand: Samsung

The K4AAG165WA-BCTD is a Samsung 8 Gb DDR4 SDRAM organized as 1G×16, delivering 3200 Mbps data rate (PC4-25600) for high-volume embedded computing, industrial and networking applications. The 96-ball FBGA package (7.5 × 13 mm, 0.8 mm pitch) provides a compact, standard-JEDEC footprint. Operating from a single 1.2 V supply with on-die termination (ODT) and internal VREF, it supports commercial temperature range (0 °C to 95 °C TC) for mainstream embedded designs.

Stock & Date Code

Brand Part Number Qty D/C Note
Samsung K4AAG165WA-BCTD 0 Confirm by RFQ Samsung K4AAG165WA-BCTD 8Gb DDR4 SDRAM, 1Gx16, 1.2V, 96-FBGA; confirm date code, lot and packing condition by RFQ.

Listed stock and date code are subject to final RFQ confirmation.

Memory Specifications

ParameterValue / Specification
Exact Part NumberK4AAG165WA-BCTD
ManufacturerSamsung Semiconductor
Product CategoryDDR4 SDRAM
Memory TypeDDR4 SDRAM, fourth-generation double data rate synchronous DRAM, JEDEC standard
Density / Capacity8 Gb (1 GB), single-die monolithic DDR4 SDRAM device
Organization / Data Width1 16-bit (16-bit I/O), 2 internal bank group 4 banks (8 banks total)
Speed / Data Rate3200 Mbps per pin (DDR4-3200, PC4-25600), 6.4 GB/s peak single-device bandwidth
Supply Voltage1.14 V to 1.26 V single supply (nominal 1.2 V), internal VREF, SSTL_12 I/O
Operating Temp.0 °C to 95 °C (TC, Tcase), commercial temperature grade
Package / Case96-FBGA (7.5 × 13 mm, 0.8 mm pitch, SMT, Tray)

Memory Features & Applications

  • 8 Gb DDR4 SDRAM density, organized as 1G×16-bit for cost-optimized embedded and computing memory
  • 3200 Mbps data rate (DDR4-3200, PC4-25600) delivers 6.4 GB/s peak bandwidth per device at 1.2 V
  • 96-ball FBGA package (7.5 × 13 mm, 0.8 mm pitch) in standard JEDEC DDR4 pinout for drop-in designs
  • 1.2 V single supply with internal VREF generator — no external VREF supply needed, simplifying PCB layout
  • On-die termination (ODT) on data, strobe and mask signals for improved signal integrity at DDR4 speeds
  • 2-bank-grou 4-bank architecture (8 banks total) with per-bank refresh for efficient concurrency
  • Programmable CAS latency (CL) and additive latency (AL) supporting CL22 at DDR4-3200 for latency tuning
  • Write leveling, read/write training via MPR (multi-purpose register) for robust memory controller training
  • Commercial temperature 0 °C to 95 °C TC — mass-production grade for desktops, networking and embedded

Need Price & Availability for K4AAG165WA-BCTD?

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Listed stock is subject to final RFQ confirmation.

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Commercial and shipment details for K4AAG165WA-BCTD are confirmed with the formal quotation.

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Frequently Asked Questions

Is K4AAG165WA-BCTD available from LimChip?

LimChip can confirm current availability, price, quantity, date code and lead time for K4AAG165WA-BCTD by RFQ.

What should buyers check before ordering K4AAG165WA-BCTD?

Buyers should check memory density, speed suffix, package, temperature grade and batch traceability for K4AAG165WA-BCTD, together with live stock and traceable supply.

How do I request a quote for K4AAG165WA-BCTD?

Use the RFQ button and include required quantity, target date code, package/case requirement, delivery country, company name and contact details.

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