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GDQ2BFAC-CQ

Mfr. #:
GDQ2BFAC-CQ
Mfr.:
GigaDevice Semiconductor
Product Type:
DDR4 SDRAM
Series:
GDQ2
Package / Case:
96-FBGA

Product Attributes

AttributeValue
Density4 Gbit (512 MB)
Organization256M x16
Prefetch8n-bit architecture
Burst LengthBL8 or BC4 (on the fly)
Supply Voltage1.2 V nominal; 1.14-1.26 V
Operating Temperature0 to +95 °C (case temperature)
Speed2666 Mbps per pin
Supply Voltage (VPP)2.5 V nominal; 2.375-2.75 V
Timing (CL-tRCD-tRP)19-19-19 at DDR4-2666
Minimum Clock Period0.75 ns at DDR4-2666
Bank Configuration8 banks in 2 bank groups, 4 banks per group
I/O Interface1.2 V pseudo open drain (POD)
Average Refresh Interval7.8 µs at case temperature 0 to +85 °C; 3.9 µs above +85 to +95 °C
ComplianceJEDEC JESD79-4D; RoHS compliant
Package Details96-ball FBGA; nominal body 13.0 x 7.5 mm; 0.80 mm ball pitch; 1.13 mm nominal total thickness, 1.20 mm maximum

Product Details

GDQ2BFAC-CQ is a GigaDevice GDQ2BFAC memory device.

DDR4 SDRAM provides high-bandwidth volatile memory with a 64-bit data path and on-die termination, serving as main memory in embedded and server designs.

Engineers apply it in networking equipment and industrial computers.

The reason to choose it is the endurance and retention the technology provides over the product life.

Within the family, this ordering code is the one specified for 4 Gbit (512 MB) density.

The data sheet fixes the organization at 256M x16.

The speed is 2666 Mbps per pin.

The prefetch of this part is 8n-bit architecture.

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