| Function / Topology | Single N-channel enhancement-mode power MOSFET |
| Input Voltage | Drain-source rating 20 V; gate-source rating ±12 V |
| Output Current | 4.2 A at VGS=4.5 V, TA=25°C |
| On Resistance | 45 mΩ at VGS=4.5 V, ID=4.2 A, TJ=25°C; 80 mΩ at VGS=2.5 V, ID=3.6 A |
| Gate Threshold | 0.60–1.20 V |
| Total Gate Charge | 8 nC typical / 12 nC max at ID=4.0 A |
| Power Dissipation | 1.25 W at TA=25°C |
| Junction Temperature | -55°C to +150°C |
| Lifecycle | No longer manufactured / EOL |
| Package Details | 3-pin Micro3 / SOT-23, 2.8–3.04×2.1–2.64 mm, 0.95 mm pitch |
Infineon Technologies