| Density | 32 GB nominal; 31,037,849,600 bytes user area (Longsys Rev. 1.2) |
| Bus Width | 1 / 4 / 8 bit |
| eMMC Version | 5.1; backward-compatible with 4.41 / 4.5 / 5.0 |
| Supply Voltage | 2.7 to 3.6 V (NAND) |
| Operating Temperature | -25 to +85 °C (temperature measurement basis not specified; Rev. 1.2) |
| NAND Type | 3D TLC (FORESEE 2023 embedded storage catalogue) |
| Bus Mode | HS400 and HS200; up to 200 MHz clock and 400 MB/s interface transfer rate in HS400 |
| VCCQ Supply | 1.7 to 1.95 V or 2.7 to 3.6 V (controller interface) |
| Performance | Longsys Rev. 1.2 lists 270 MB/s read and turbo write (FBA) up to 200 MB/s, x8, 200 MHz DDR, 512 KB transfer, no filesystem overhead, internal board. Longsys E-00973 V1.0 lists up to 330 MB/s read and up to 200 MB/s write, x8, HS400, 512 KB transfer, no filesystem overhead. Read-speed difference requires confirmation. |
| Active Current | ICC 100 mA and ICCQ 140 mA; x8, 200 MHz DDR, VCC 3.3 V, VCCQ 1.8 V, 25 °C (Rev. 1.2) |
| Standby Current | ICC 80 µA and ICCQ 100 µA; x8, 200 MHz DDR, VCC 3.3 V, VCCQ 1.8 V, 25 °C (Rev. 1.2) |
| Sleep Current | ICC 0 and ICCQ 100 µA; VCC off, VCCQ on, 25 °C (Rev. 1.2) |
| Storage Temperature | -40 to +85 °C without operation (Rev. 1.2) |
| Data Management | Hardware ECC, bad-block management, global wear-leveling and sudden-power-loss safeguard |
| Package Details | 153-ball FBGA, 11.5 × 13.0 × 0.8 mm |
