IPB020N10N5
Infineon Technologies- 制造商型号：
- IPB020N10N5
- 制造商：
- Infineon Technologies
- 产品类型：
- N-Channel MOSFET
- 系列：
- OptiMOS 5
- 封装：
- TO263-3
- 描述：
- Power Discretes
产品属性
| 属性 | 数值 |
|---|---|
| Product Category | Power Discretes |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 176 A |
| RDS(on) max | 2.0 mΩ (at VGS = 10 V) |
| Gate Charge (QG typ) | 168 nC typ |
| Power Dissipation (Ptot) | 375 W |
| Technology | OptiMOS 5 |
| Operating Temperature | -55 °C to 175 °C |
| Package / Pins | PG-TO263-3, 3 pins |
| Qualification | AEC-Q101 (Automotive) |
| Function / Topology | N-Channel MOSFET |
| Output Rating | 100 V / 176 A |
| Package / Orderable Variant | PG-TO263-3, 3 pins; exact suffix IPB020N10N5 |
| Package Details | PG-TO263-3, 3 pins |
