| 属性 | 数值 |
|---|---|
| Density / Capacity | 16 Mbit |
| Interface | SPI / Quad I/O / QPI |
| Supply Voltage | 2.3–3.6 V |
| Operating Temperature | -40 °C to +125 °C |
| Package Details | 8-contact WSON, 6 × 5 mm |
发货前核对批次、封装、标签及丝印。可按需提供验货照片，并协助第三方检验。
支持全球交付。承运商、交期及买方指定货代要求，在报价时确认。
付款方式、币种及贸易条款，以正式报价或形式发票为准。
Samsung Electronics
Texas Instruments8 Gbit automotive DDR3L SDRAM, 512M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
Samsung Electronics1 Gbit industrial DDR3L SDRAM, 64M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
Texas Instruments2 Gbit industrial DDR3L SDRAM, 128M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
SK hynix2 Gbit automotive DDR3L SDRAM, 128M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
Texas Instruments256 Mbit automotive mobile DDR SDRAM, 8M × 32, 166 MHz
Integrated Silicon Solution, Inc.
Samsung Electronics