GigaDevice Semiconductor| 属性 | 数值 |
|---|---|
| Density / Capacity | 2 Gbit |
| Interface | SPI NAND |
| Page Size | 2 KB |
| Supply Voltage | 2.7 V to 3.6 V |
| Maximum Serial Clock | 104 MHz |
发货前核对批次、封装、标签及丝印。可按需提供验货照片，并协助第三方检验。
支持全球交付。承运商、交期及买方指定货代要求，在报价时确认。
付款方式、币种及贸易条款，以正式报价或形式发票为准。
GigaDevice Semiconductor8 Gbit automotive DDR3L SDRAM, 512M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
GigaDevice Semiconductor
Infineon TechnologiesGigaDevice Semiconductor1 Gbit industrial DDR3L SDRAM, 64M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
GigaDevice SemiconductorInfineon TechnologiesGigaDevice Semiconductor2 Gbit industrial DDR3L SDRAM, 128M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
GigaDevice SemiconductorInfineon TechnologiesGigaDevice Semiconductor2 Gbit automotive DDR3L SDRAM, 128M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
GigaDevice Semiconductor