GigaDevice Semiconductor| 属性 | 数值 |
|---|---|
| Memory Type | SPI NAND Flash |
| Density / Capacity | 2 Gbit |
| Interface | x1, x2, x4 |
| Page Data Size | 2 KB |
| Supply Voltage | 2.7 V to 3.6 V |
| Package Details | 8-WSON, 8 × 6 mm, 1.27 mm pitch |
发货前核对批次、封装、标签及丝印。可按需提供验货照片，并协助第三方检验。
支持全球交付。承运商、交期及买方指定货代要求，在报价时确认。
付款方式、币种及贸易条款，以正式报价或形式发票为准。
GigaDevice Semiconductor8 Gbit automotive DDR3L SDRAM, 512M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
GigaDevice Semiconductor
SK hynixGigaDevice Semiconductor1 Gbit industrial DDR3L SDRAM, 64M × 16, 1600 MT/s
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GigaDevice SemiconductorSK hynixGigaDevice Semiconductor2 Gbit industrial DDR3L SDRAM, 128M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
GigaDevice SemiconductorSK hynixGigaDevice Semiconductor2 Gbit automotive DDR3L SDRAM, 128M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
GigaDevice Semiconductor