GigaDevice Semiconductor| 属性 | 数值 |
|---|---|
| Density / Capacity | 1 Gbit |
| Interface | SPI NAND (x1, x2, x4) |
| Supply Voltage | 1.7 V to 2.0 V |
| Operating Temperature | -40 °C to +85 °C |
| Package Details | 8-lead WSON, 8 × 6 mm |
发货前核对批次、封装、标签及丝印。可按需提供验货照片，并协助第三方检验。
支持全球交付。承运商、交期及买方指定货代要求，在报价时确认。
付款方式、币种及贸易条款，以正式报价或形式发票为准。
GigaDevice Semiconductor8 Gbit automotive DDR3L SDRAM, 512M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
GigaDevice Semiconductor
Texas InstrumentsGigaDevice Semiconductor1 Gbit industrial DDR3L SDRAM, 64M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
GigaDevice Semiconductor
Analog DevicesGigaDevice Semiconductor2 Gbit industrial DDR3L SDRAM, 128M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
GigaDevice SemiconductorAnalog DevicesGigaDevice Semiconductor2 Gbit automotive DDR3L SDRAM, 128M × 16, 1600 MT/s
Integrated Silicon Solution, Inc.
GigaDevice Semiconductor