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RFQ ListingDiscrete Semiconductors
SIDR626EP-T1-RE3 is a Vishay Siliconix TrenchFET Generation IV N-channel MOSFET rated 60 V with 1.45 mOhm typical (1.74 mOhm max) RDSon at 10 V, 227 A continuous current at Tc and top-side cooling in an 8-pin PowerPAK SO-8DC package, tuned for the lowest figure of merit in synchronous rectification and motor drive.
ManufacturerVishay Siliconix
PackagePowerPAK SO-8DC, 8-pin, 6.15 × 5.15 mm
SeriesSIDR / TrenchFET Gen IV
Power IC Specifications
| Parameter | Value / Specification |
|---|---|
| Device Type | N-channel TrenchFET Generation IV power MOSFET, top-side cooling |
| Voltage Rating | 60 V drain-source voltage (VDSS); ±20 V gate-source |
| Current Rating | 227 A continuous at Tc = 25 °C; 50.8 A at Ta = 25 °C |
| On-Resistance | 1.45 mOhm typ / 1.74 mOhm max at VGS = 10 V, ID = 20 A |
| Gate Charge | 102 nC max total gate charge at VGS = 10 V |
| Power Dissipation | 150 W at Tc = 25 °C; 7.5 W at Ta = 25 °C |
| Figure of Merit | Tuned for lowest RDSon x Qg figure of merit |
| Temperature Grade | -55 °C to +175 °C operating junction temperature |
| Package / Case | PowerPAK SO-8DC, 8-pin, 6.15 × 5.15 mm |
Power Features & Applications
- TrenchFET Gen IV silicon tuned for lowest figure of merit
- 1.45 mOhm typical on-resistance cuts conduction loss
- 227 A continuous current with 150 W dissipation at case
- Top-side cooling provides an additional thermal transfer path
- 100% UIS tested for avalanche robustness
- Compact 8-pin PowerPAK SO-8DC with exposed drain pad
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Frequently Asked Questions
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