Quality Confirmation
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DMHT6016LFJ-13 is a Diodes Incorporated complementary MOSFET H-bridge array integrating four N-channel 60 V devices in one V-DFN5045-12 (Type B) package, with 22 mOhm RDSon at 10 V gate drive, 10.6 A continuous current and 14.8 A package-level capability for motor control and DC-DC power conversion.
| Parameter | Value / Specification |
|---|---|
| Device Type | Quad N-channel enhancement mode MOSFET array, full H-bridge |
| Voltage Rating | 60 V drain-source voltage (VDSS); ±20 V gate-source |
| Current Rating | 10.6 A continuous per device at 25 °C; 14.8 A package (Ta) |
| On-Resistance | 22 mOhm max at VGS = 10 V; 30 mOhm max at 4.5 V |
| Power Dissipation | 2.7 W (steady state) with RθJC 4.4 °C/W |
| Switching | Low input capacitance, 864 pF Ciss, for fast switching |
| Avalanche | 11.7 mJ single-pulse avalanche energy (EAS) |
| Temperature Grade | -55 °C to +150 °C operating junction temperature |
| Package / Case | V-DFN5045-12 (Type B), 12-pin, 5.00 × 4.50 mm |
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