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DMHT6016LFJ-13

Quad N-Channel MOSFET H-Bridge Array

DMHT6016LFJ-13 is a Diodes Incorporated complementary MOSFET H-bridge array integrating four N-channel 60 V devices in one V-DFN5045-12 (Type B) package, with 22 mOhm RDSon at 10 V gate drive, 10.6 A continuous current and 14.8 A package-level capability for motor control and DC-DC power conversion.

ManufacturerDiodes Incorporated
PackageV-DFN5045-12 (Type B), 12-pin, 5.00 × 4.50 mm
SeriesDMHT

Power IC Specifications

ParameterValue / Specification
Device TypeQuad N-channel enhancement mode MOSFET array, full H-bridge
Voltage Rating60 V drain-source voltage (VDSS); ±20 V gate-source
Current Rating10.6 A continuous per device at 25 °C; 14.8 A package (Ta)
On-Resistance22 mOhm max at VGS = 10 V; 30 mOhm max at 4.5 V
Power Dissipation2.7 W (steady state) with RθJC 4.4 °C/W
SwitchingLow input capacitance, 864 pF Ciss, for fast switching
Avalanche11.7 mJ single-pulse avalanche energy (EAS)
Temperature Grade-55 °C to +150 °C operating junction temperature
Package / CaseV-DFN5045-12 (Type B), 12-pin, 5.00 × 4.50 mm

Power Features & Applications

  • Four N-channel 60 V MOSFETs integrated as a single H-bridge
  • Low 22 mOhm RDSon at 10 V gate drive minimizes conduction loss
  • Thermally efficient V-DFN5045-12 package with exposed pad
  • Low input capacitance supports fast, efficient gate drive
  • 14.8 A continuous package current with 60 A pulsed capability
  • Green, halogen-free RoHS-compliant molded construction

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