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RFQ ListingDiscrete Semiconductors
NCE60P45K is a Wuxi NCE Power trench P-channel power MOSFET rated -60 V and -45 A with 31 mOhm typical (35 mOhm max) RDSon at VGS = -10 V, 110 W dissipation and 168 mJ avalanche energy in a TO-252-2L (DPAK) package, 100% UIS tested for high-frequency and hard-switched power stages.
ManufacturerWuxi NCE Power
PackageTO-252-2L (DPAK), 6.50 × 6.10 mm body
SeriesNCE
Power IC Specifications
| Parameter | Value / Specification |
|---|---|
| Device Type | P-channel enhancement mode trench power MOSFET, high-density cell |
| Voltage Rating | -60 V drain-source voltage (VDS); ±20 V gate-source |
| Current Rating | -45 A continuous drain current at TC = 25 °C; -180 A pulsed |
| On-Resistance | 31 mOhm typ / 35 mOhm max at VGS = -10 V, ID = -20 A |
| Gate Threshold | -2.0 V to -3.5 V gate threshold voltage |
| Power Dissipation | 110 W at TC = 25 °C; RθJC 1.36 °C/W |
| Avalanche | 168 mJ single-pulse avalanche energy, 100% UIS tested |
| Temperature Grade | -55 °C to +175 °C operating junction temperature |
| Package / Case | TO-252-2L (DPAK), 6.50 × 6.10 mm body |
Power Features & Applications
- Advanced trench technology for low RDSon with low gate charge
- -60 V blocking with -45 A continuous current in TO-252 (DPAK)
- 31 mOhm typical on-resistance at -10 V gate drive
- 168 mJ avalanche energy with 100% UIS testing for robustness
- 35.1 nC total gate charge suits hard-switched, high-frequency circuits
- Excellent thermal dissipation package for UPS and power stages
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Frequently Asked Questions
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