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RFQ ListingDiscrete Semiconductors
DMN62D0UDW-7 is a Diodes Incorporated dual N-channel enhancement mode MOSFET rated 60 V and 350 mA per channel in a 6-pin SOT-363 (SC-88) package, with 2 Ohm max RDSon at 4.5 V gate drive and 1 V max gate threshold for level-shift, load switch and low-side switching duties.
ManufacturerDiodes Incorporated
PackageSOT-363 (SC-88), 6-pin, 2.15 × 1.30 mm
SeriesDMN62
Power IC Specifications
| Parameter | Value / Specification |
|---|---|
| Device Type | Dual N-channel enhancement mode small-signal MOSFET |
| Voltage Rating | 60 V drain-source voltage (VDSS) |
| Current Rating | 350 mA continuous drain current per channel at 25 °C |
| On-Resistance | 2 Ohm max at ID = 100 mA, VGS = 4.5 V |
| Gate Threshold | 1 V max gate threshold voltage at 250 µA |
| Gate Charge | 0.5 nC max total gate charge at VGS = 4.5 V |
| Power Dissipation | 320 mW maximum package power dissipation |
| Temperature Grade | -55 °C to +150 °C operating junction temperature |
| Package / Case | SOT-363 (SC-88), 6-pin, 2.15 × 1.30 mm |
Power Features & Applications
- Two 60 V N-channel MOSFETs in a compact SOT-363 (SC-88) footprint
- 350 mA per-channel continuous current with 2 Ohm max RDSon
- 1 V max gate threshold supports low-voltage logic drive
- Ultra-low 0.5 nC gate charge minimizes driver loading
- 320 mW package dissipation with -55 °C to +150 °C operation
- Ideal dual-channel companion for load switches and level shifters
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Frequently Asked Questions
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