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RFQ ListingDiscrete Semiconductors
PBSS4041NX is a Nexperia 60 V, 6.2 A NPN low VCEsat (BISS) transistor in a flat-lead SOT89. Very low collector-emitter saturation resistance (about 18 mOhm typ at 4 A) and high current gain at high IC deliver efficient load switching in battery-driven devices, power management and motor/fan drive circuits. AEC-Q101 qualified.
ManufacturerNexperia
PackageSOT89 (SC-62), 4.5 × 2.5 × 1.5 mm, 1.5 mm pitch
SeriesPBSS4041N
Component Specifications
| Parameter | Value / Specification |
|---|---|
| Device Type | NPN low VCEsat (BISS) medium-power transistor, flat-lead SOT89; PNP complement PBSS4041PX |
| Voltage Rating | VCEO 60 V, VCBO 60 V, VEBO 5 V |
| Current Rating | IC 6.2 A continuous collector current; ICM 15 A peak (single pulse, tp <= 1 ms) |
| Saturation / Resistance | RCEsat about 18 mOhm typ / 35 mOhm max at IC = 4 A, IB = 400 mA (pulsed) |
| Power Dissipation | 600 mW on standard FR4 footprint; up to 1650 mW with 6 cm2 collector pad |
| Gain | High collector current gain (hFE) maintained at high IC |
| Temperature Grade | -55 °C to +150 °C; AEC-Q101 qualified |
| Package / Case | SOT89 (SC-62), 4.5 × 2.5 × 1.5 mm, 1.5 mm pitch |
Component Features & Applications
- Very low collector-emitter saturation voltage for efficient switching
- High 6.2 A continuous and 15 A peak current capability
- High current gain retained at high collector currents
- Flat-lead SOT89 saves board space versus larger power packages
- AEC-Q101 qualification supports automotive designs
- PNP complement PBSS4041PX available for mirrored stages
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Frequently Asked Questions
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